Nanooptics and photonics

Diode and photonic properties of lateral heterostructures based on functionalized graphene
Balabai R., Kravtsova D., Solomenko A.
Kryvyi Rih St. Pedagogical Un., 54 Gagarina Ave., Kryvyi Rih, 50086, Ukraine.
E-mail: solomenko.anastasiia@gmail.com

Lateral, in-plane heterostructures (HSs) in which one-dimensional junctions are created between the different materials are very interesting. These kinds of HSs open the possibility to obtain ultimately thin devices. Truly 1D stitching have been observed at the interface between graphene and h-BN [1]. Using certain technological methods, by creating on the graphene plane some local adsorption parts of various chemical elements (functionalization), it is possible to organize lateral HSs on a common carbon base [2]. Such lateral HSs exhibit diode properties. The periodic alternation parts of pure graphene and functionalized graphene have different dielectric permittivity, which gives grounds to consider such structures as photonic crystals and to investigate their photonic properties.
For extension of information about diode and photonic properties of lateral HSs based on functionalized graphene, the valence electron density spatial distribution, the densities of electron states, the band gaps, the charges on parts of HSs, the Coulomb potentials, the dielectric matrices, and the macroscopic permittivities have been calculated in the framework of the electronic density functional and ab initio pseudopotential based on own program code (Fig. 1).
Publication is based on the research provided by the grant support of the State Fund for Fundamental Research (project F76/70-2017).
         
Fig. 1 1) Energetic bands of infinite C, infinite CH, infinite C/CH lateral HS (left to right); 2) absorption spectrum of C/CH lateral HS in different directions of transfer in an excitation: a) X, b) Y, c) [X + Y], [λ] = nm

1.	Solıs-Fernandez P. et al. Synthesis, structure and applications of graphene based 2D heterostructures // Chem. Soc. Rev.-2017.- 46.-P. 4572-4613. 
2.	Balabai R., Solomenko A. Flexible 2D layered material junctions // Appl Nanosci-2018. DOI: 10.1007/s13204-018-0709-9.