(Nanocomposites and nanomaterials of International research and practice conference "Nanotechnology and nanomaterials")

Pseudopotential study of ZnSe quantum dots: Band
structure and dielectric properties

F. Mezrag1, N. Bouarissa1

1Laboratory of Materials Physics and Its Applications. University of M’sila. 28000 M’sila. Algeria
E-mail:mezrag_fadila@yahoo.fr

         Band structure, energy band gap and dielectric constant of zinc-blende ZnSe spherical quantum dots and their size dependence have been investigated and the effect of quantum confinement on the investigated properties has been examined within the framework of the pseudopotential approach. Computed results, from our investigations showed that a tremendous variation of the properties occurred when the quantum dots size is smaller than about 5 nm. This could provide more diverse opportunities to obtain desired electronic and dielectric properties that were not possible in the unconfined (bulk) ZnSe compound semiconductor.

1.	N. H. M. AlWadiy, N. Bouarissa, M. A. Khan, Quantum confinement effects on the band structure and dielectric properties of nanostructured GaAs,// Phys. Scr. 84 (2011) 015704 (5pp)
2.	 S. Adachi, Properties of Group IV, III-V and II-VI Semicondutors,// Wiley, Chichester, 2005.    
3.	T. S. Moss, A relationship between the refractive index and the infrared threshold of sensitivity for photoconductors//Proc. Phys. Soc. B 63 (1950) 167-174