Physico-Chemical nanomaterials science

Electrochemical deposition of metals into nanopores of Si/SiO2 template 
E.Kaniukov, D. Yakimchuk, V. Bundyukova, S. Demaynov
Scientific and Practical Materials Research Center of NAS of Belarus, P. Brovka str., 19, Minsk 220072, Belarus. 
E-mail: Ka.egor@mail.ru

In recent years, the stable growth of costs for developing of new technologies for producing of electronic devices composed of very small active elements (down to several nanometers) is observed. Monocrystalline silicon is known to be the main material for modern electronics. In this connection the investigations of processes for deposition of various nanostructures (magnetic, nonmagnetic and semiconductor as well) onto Si surface for electronic nanodevices (transistors, emitters, sensors, photoresistors, etc.) production are of great interest. 
As a result the technique of tracks formation under swift heavy ions implantation for electronic nanodevices manufacturing is under consideration nowadays. First of all, it is interesting to use etched tracks in SiO2 grown on monocrystalline Si wafer. The chemical etching of the latent tracks in SiO2 layer on Si substrate results in formation of through nanopores suitable for filling with different substances such as metals, polymers, semiconductors, etc. being in direct contact with Si. Filled nanopores in SiO2 layer on Si wafer are of particular interest as the intermediate structures between traditional silicon-based microelectronic devices and nanoelectronic ones. 
In this work we demonstrates a simple way to control the filling degree of the pores of a silicon oxide template on silicon substrate with nickel. SiO2/Si template was formed using the swift heavy ion tracks technology, which includes irradiation with high energy ions and chemical transformation of the obtained latent tracks into the pores. The preparation of SiO2(Metal)/Si nanostructures with different filling degree of pores in SiO2 with nickel was performed using the electrodeposition method by changing the parameters of the process. A study and analysis of the morphology of SiO2(Metal)/Si nanostructures using scanning and tunnelling electron microscopy, selected area electron diffraction and atomic force microscopy was carried out to determine the nature of pore filling by metal.