Nanooptics and nanophotonics

Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells
Izhnin I.I.1, Syvorotka I.I.1, Voitsekhovskii A.V.2, Nesmelov S.N.2,         Dzyadukh S.M.2, Dvoretsky S.A.2, 3, Mikhailov N.N.3
1 Scientific Research Company “Electron-Carat”, Striskaya St. 202, Lviv-79031, Ukraine.
E-mail: i.izhnin@carat.electron.ua.
2 National Research Tomsk State University, Lenina Av. 36, Tomsk-634050, Russia.
3 A.V. Rzhanov Institute of Semiconductor Physics SB RAS, akademika Lavrent`eva Av. 13, Novosibirsk-630090, Russia.

This work presents the results of experimental investigation of the impact of a single quantum wells (SQW) based on HgTe introduced into n-HgCdTe on the admittance of the MIS structures with CdTe/Al2O3 insulator in wide range of measurement conditions. Earlier, results of admittance studies of MIS structures based on p-HgCdTe with SQW in the space-charge region was published in [1,2].
The studied HgCdTe films were grown by the molecular beam epitaxy on GaAs (013) substrates with ZnTe/CdTe buffer layers. The HgTe SQW with the width of 6.5 nm was sandwiched between two Hg1−xCdxTe (x = 0.65-0.71) barrier layers with the thickness of (30-35) nm. Structures with different concentration of indium impurity in the barrier layers (5×1021 and 1×1023 m-3) were studied.
It was found that the presence of the SQW significantly affects the electrical characteristics of HgCdTe MIS structures. For MIS structures based on n-HgCdTe, a capacitive maximum is observed at the beginning of a strong inversion, which is associated with the release of holes from the well through tunneling processes. It is shown that for MIS structures based on n-HgCdTe the presence of the SQW can lead to the appearance of peaks on capacitance and conductance curves.

1.	Gorn D. I., Voitsekhovskii A. V., Dzyadukh S. M., Nesmelov S. N. Differential conductance and capacity-voltage characteristics of MIS structures with single quantum wells based on HgTe // Int. J. Nanotechnol. .-2015.-12, N 3/4.-P. 164-173.
2.	Izhnin I. I., Nesmelov S. N., Dzyadukh S. M., Voitsekhovskii A. V., Gorn D. I., Dvoretsky S. A., Mikhailov N. N. Admittance investigation of MIS structures with HgTe-based single quantum wells // Nanoscale Res. Lett.-2016.-11.-P. 53.