Nanoscale physics
Influence of initial QW depth on the phenomena connected with delta-doping of the QW
Tulupenko V.N.1, Tiutiunnyk A.M.2, Laroze D2, Akimov V.I.3, Duque C.A.4, Kotov Ya.A1, Sushenko D.G.1, Demediuk R. O.1, Fomina O.S. 1
1 Donbass State Engineering Academy, Kramatorsk, Academichna str. 62, 84300, Ukraine.
E-mail: viktor.tulupenko@gmail.com
2 Instituto de Alta Investigación, CEDENNA, Universidad de Tarapacá,
Casilla 7D, Arica, Chile 
3 Facultad de Ciencias Básicas, Universidad de Medellín, Medellín, Colombia.
4 Grupo de Materia Condensada-UdeA, Universidad de Antioquia, Medellín, Colombia

It was earlier shown in our publications [1], that delta-doping of the QW with concentrations of shallow impurities being on the semiconductor side of Mott’s transition led to two phenomena connected with ionization of the delta layer. These phenomena are both the change of impurity binding energy and energy separation between couples of the first space-quantized energy levels. The point is that ionization of the delta layer is followed by an appearance of a v-shaped quantum well, which is superimposed on the original (presumably rectangular) QW energy profile. It means that a new compound quantum well with its own structure of energy levels and accordingly with a new impurity binding energy is created. Taking into account that impurities are shallow their ionization can easily be executed with a small electric field applied in a plane of the QW. In turn it means that a possibility of changing energy distances between couples of neighboring energy levels appears, which is especially important for creation of tunable optoelectronic devices like modulators, photo detectors, etc. In mentioned above calculations [1] we used Si0.8Ce0.2/Si/Si0.8Ce0.2 structure with a QW depths 200 meV found in literature. Meanwhile new data on the QW depth being 120 meV of the same structure were published. Therefore it is of interest to analyze the influence of new data on discussed above phenomena and this is what the present work is devoted to.

1.	Tulupenko V., Duque C. A., Demediuk R., Belykh V., Tiutiunnyk A., Morales A. L., Akimov V., Restrepo R. L., Mora-Ramos M. E., Poroshin V., and. Fomina O. On some new effects in delta-doped QWs // Physica E.-2015.-66.-P. 162–169.