Nanocomposites and nanomaterials
Chalcogenide semiconductor nanostructures: growth, structure and properties
A.Yu. Sipatov, N.E. Overko, S.V. Yushko, D.N. Kabashna
 National Technical University “Kharkiv Polytechnic Institute”. 
Kirpicheva Street, 2, Kharkiv-61002, Ukraine. 
E-mail: sipat@kpi.kharkov.ua.

The review of nanostructures based on chalcogenide semiconductors (PbS, PbSe, PbTe, SnTe, EuS. EuSe, YbS, YbSe, SrS, SrSe) is presented. It is considered the main methods of their creation, the features of their structure and properties. It was experimentally realized the different types of nanostructures: 2D (superlattices, quantum wells), 1D (nanowires), 0D (quantum dots) and dislocation nanogrids.
It was shown that semiconductor nanostructures can increase the thermoelectric properties. For EuS-PbS superlattices Seebeck coefficient and electrical conductivity have been shown to increase with diminishing PbS layer thickness and to attain values exceeding several times those for one-layer thick PbS film.
The superconductivity has been discovered in the multilayer PbTe-PbS nanostructures [1] where there are no superconducting transitions in single-layer films. The superconductivity is connected with the presence of misfit dislocation nanogrids at the interfaces (there is no superconductivity if the dislocation nanogrids are absent).
The quantum-size effects in the nanostructures were observed by photoluminescence spectra [2-3]: the blue shifts of the emission lines are in good agreement with predictions for 2D and 0D quantizations.   

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