Nanocomposites and nanomaterials

Epitaxial synthesis of 2D materials of group IV elements
Izhnin I.I.1, Kurbanov K.R.2, Voitsekhovskii A.V.3, Kokhanenko A.P.3, Lozovoy K.A.3, Dirko V.V.3
1 Scientific Research Company “Electron-Carat”, Stryjska St., 202, Lviv 79031, Ukraine.
E-mail: i.izhnin@carat.electron.ua
2Kremenchug Flight College, Pobedy St., 17, Kremenchug, 39600, Ukraine
3 National Research Tomsk State University, Lenina Av., 36, Tomsk 634050, Russia.

Graphene-like materials of the group IV elements, such as silicene, germanene and stanene, with a two-dimensional honeycomb lattice have attracted increased attention of researchers for the last few years due to their exotic electronic and optical properties caused by the practically zero band gap, small effective masses and the same symmetry as in graphene. Unique properties of graphene-like 2D materials make it possible to create on their basis devices of a new generation: topological transistors, high-sensitive gas sensors, energy-intensive sources of power, thermoelectric generators, quantum computers [1].
The basic method of synthesis of heterostructures with 2D crystals of silicene, germanene and stanene nowadays is their self-induced formation during the molecular beam epitaxy. For various applications in modern nano- and optoelectronics it is essential to create heterostructures with 2D layers with different properties that are defined by such parameters as thickness and roughness of 2D layers, elastic strain distribution, presence or absence of defects [2].
In this work comparative analysis of peculiarities of epitaxial synthesis of two-dimensional materials of group IV elements, such as silicene, germanene and stanene on various substrates is carried out. Stages of formation of a two-dimensional layer with a thickness from one to several monolayers and the moment of the beginning of the formation of three-dimensional islands are considered. Special attention is paid to identifying the possibilities of suppressing the nucleation of islands and preventing the transition to undesirable three-dimensional growth.

1.	Matusalem F., Koda D. S., Bechstedt F., Marques M., Teles L. K. Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates // Sci Rep.-2017.-7.-P. 15700 (1-6).
2.	Molle A., Goldberger J., Houssa M., Xu Y., Zhang S., Akinwande D. Buckled two-dimensional Xene sheets // Nat Mater.-2017.-16.-P. 163-169.