Physico-Chemical nanomaterials science

Study of point-defect complexes reconstruction in silicon near-surface layers under the ion implantation process
D. Slobodzyan1, M. Kushlyk1, A. Luchechko1, R. Lys1, Ya. Shpotyuk1,2, B. Mahlovanyi2, M. Żyłka3, W. Żyłka4
1 Department of Sensor and Semiconductor Electronics, Ivan Franko National University of Lviv, 107, Tarnavskoho Str., 79017 Lviv, Ukraine; 
2 Institute of Physics, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszów, Poland
3 Department of Aerospace Engineering, Rzeszow University of Technology, 8, Powstańców Warszawy al., 35-959 Rzeszów, Poland; 
4 Institute of Materials Engineering, University of Rzeszow, 1, Pigonia Str., 35-310 Rzeszów, Poland; 
Е-mail: dmytro.slobodzyan@lnu.edu.ua

Today, silicon is an important material for the manufacture of electronic devices for various purposes. Therefore, a significant number of scientific publications devoted to the study of its properties have accumulated over the past few decades. However, the regular miniaturization of the elements stimulates an increase in the level of requirement for the perfection of the internal structure of silicon, as well as for the reliability of devices based on it. This, in turn, sets a high priority for the study of silicon nanoscale complexes especially Si clusters to improve the properties of nanostructured materials.
P-type Cz-Si was used for the studies. Samples have been cut from a single crystal silicon disk with flat surfaces orientation (111). 
The aim of the work was to form a surface-barrier (SBS) and light-emitting structures (LES) and to investigate the change in their electro physical and optical characteristics under the influence of irradiation.
Defect formation processes on the surface and subsurface layers of silicon crystals were analysed by IR spectroscopy.
Structural studies of silicon morphology were performed with an LUMAM I-3 optical microscope and a Solver P47-PRO atomic-force microscope.
Electrophysical properties of SBS were studied by measuring and analysing current-voltage characteristic (IVC) and high-frequency capacitance-voltage characteristic (CVC) curves. Optical properties of LES were studied by measuring and analysing electroluminescence spectra.
A model for the reconstruction of nanoscale defective complexes of the near-surface silicon layer was proposed.