Nanoscale physics

The deformation effects in isovalent doping of CdSe quantum dots with a multilayer shell for their biomedical applications
Kuzyk O.V.1, Dan’kiv O.O.1, Stolyarchuk I.D.1, Peleshchak R.M.1,2
1 Drohobych Ivan Franko State Pedagogical University, 
24, Ivan Franko Str.,  Drohobych,  Ukraine.
E-mail: olehkuzyk74@gmail.com
2 Lviv Polytechnic National University, 12, Stepan Bandera Str., Lviv, Ukraine.

Surface passivation of quantum dot (QD) due to the use of shell of different materials, proved to be an effective approach to reduce surface defects, which can expand the spectrum of absorption, accelerate the transfer of current carriers and reduce recombination losses. A special positive effect can be achieved if you use the multilayer shell [1].
Recently, a new approach has been developed tocontrol the properties of semiconductor heterostructures with QDs. It is based on the introduction of a single impurity atom into the QD. The exclusive properties of the structures with QDs reveal themselves only in the case where the QDs are uniform enough by their shapes and dimensions. Therefore, the main task at the QD growing is the control over their morphology: the average size, density, uniformity, and so on [2]. Isovalent impurity is not an electrically active impurity, i.e. it does not increase the charge carrier concentration. However, it substantially changes the conditions of QD formation owing to the induced diffusion-deformation flux. The investigation of deformation effects in QD with a multicomponent shell doped with an isovalent impurity is an urgent task associated with their use in medicine.
In this work, the investigations of deformation effects in CdSe / ZnS/CdS/ZnS QDs, which are doped with an isovalent impurity and interact with human serum albumin molecules, have been conducted. 

1.  Fan H., Ni Z., Feng Y, Fan. X, Kuo Z. High pressure photoluminescence and Raman investigations of CdSe/ZnS core/shell quantum dots // Appl Phys Lett.-2007.-90.-P. 021921.
2.  Peleshchak R., Kuzyk O., Dan’kiv O. Formation of periodic structures under the influence of an acoustic wave in semiconductors with a two-component defect subsystem // Ukr J Phys.-2016.-61. P. 741.