Nanoscale physics

Gate tunable electron interaction in atomically thin dielectric films
Kostrobii P.P.1, Ryzha I.A.1
1 Lviv Polytechnic National University, 12 Bandera Street, Lviv, Ukraine, 79013.
E-mail:Petro.P.Kostrobii@lpnu.ua

High dielectric constant (high ε – 2D systems) enjoy an intense experimental and theoretical attention [1, 2]. The interest is motivated by a high technological promise of such systems for fabrication of nanoscale capacitors components.
In this paper we present the results of the theoretical investigation of the electrostatic potential φ in a dielectric film with a high dielectric permittivity ε1 that is sprayed over a substrate with a dielectric constant ε2 (ε1 >> ε2). In contrast to [2] here we considered the influence of polarization effects that emerge on the interface between dielectrics.

1.	Oshada M, Sasaki T. Two dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks, Advanced Materials 24, 2012, pp. 210-228.
2.	Kondovych S., Luk’yanchuk I., Baturina T. & Vinokur V. Gate-tunable electron interaction in high-κ dielectric films, 2017, Sci Rep 7, 42770.