"Nanoscale physics"

Investigation of nanoscale core-shell structure of silicon microcrystal doped by boron and nickel: properties and application
A.Druzhinin, I.Ostrovskii, Yu.Khoverko, N.Liakh-Kaguy, A. Medvid 1
1 Department of Semiconductor Electronics, Institute of Telecommunications, Radioelectronics and Electronic Engineering, Lviv Polytechnic National University, Kotliarevskyi Str., 1, Lviv-79013, Ukraine.
E-mail: druzh@polynet.lviv.ua.

The p-type silicon microcrystals doped with boron impurity and modified with nickel transition metal impurity were investigated. According to the results of Hall studies, the concentration of impurities of electrically active charge carriers corresponds to the metal-dielectric transition in silicon (5.5×1018 см-3). The electrical conductivity of crystals was studied in a wide temperature range from 4.2 K to 300 K. Due to the specific "core-shell" structure of the crystal, the magnetoresistance of the crystal in magnetic fields up to 14 T was studied. The level of doping of silicon microcrystals doped with boron impurities doped to concentrations is substantiated: Boron impurities doped to concentrations of 5×1018 см-3, which directly corresponds to the metal-dielectric transition in silicon on the dielectric side for use in microelectronic magnetic field sensors with magnetoresistive principle of operation.
The use of Si <B, Ni> microcrystals allows to create high-precision sensitive elements of the microelectronic sensor that can operate in liquid helium temperatures under strong magnetic fields up to 14 T with the ability to integrate sensitive elements with information processing schemes and low cost.
         As a result of magnetic field studies, it was found that the proposed sensitive element of the microelectronic sensor has a extremely high sensitivity to the magnetic field, and the simplicity of construction provides low inertia and high speed.

1.	A. Druzhinin, I. Ostrovskii, Y. Khoverko, R. Koretskii. Strain-induced effects in p-type Si whiskers at low temperatures//Materials Science in Semiconductor Processing.– 2015.–Vol. 40.– P. 766–771