Nanoscale physics

Modeling of thermodynamic characteristics of 2D electronic layers near the surface of an atomically thin dielectric
Kostrobii P.P.1, Markovych B.M.1, Ryzha I.A.1, Polovyi V.Ye.1
1 Lviv Polytechnic National University, 12 Bandera Street, Lviv, Ukraine, 79013, Ukraine.
E-mail: Vitalii.Y.Polovyi@lpnu.ua

Over the past 50 years transport, optical and thermodynamics properties of two-dimensional electrons have been extensively studied in the metal-oxide-semiconductor [1] and semiconductor [2] heterostructures. During last years an atomically thin dielectric (ATD) films, such as mono- and a few-layer hexagonal boron nitride or transition-metal dichalcogenides, have substantially studied [2].
In this paper we proposed and investigated a model of inversion layer of electrons near ATD. Unlike an approach proposed in [2] we investigated degenerated inversion layer of electrons with a correct taking into account of the electroneutrality condition. Carried out a comparative analysis of the obtained results with an experimental data for inversion layers in the metal-dielectric-semiconductor structures.

1.	Ando T., Fowler A.B., Stern F., Rev. Mod. Phys., 1982, 54, 437.
2.	Vasko F. T., Journal of Applied Physics 129, 204301 (2021).