Nanoobjects microscopy
Kelvin probe force microscopy validation of piezo polarization and electron accumulation effects in III-N nanowire structures
Lytvyn P.M.1, Kuchuk A.V.1, Malyuta S.V.1,2, Prokopenko I.V1., 
Wierzbicka A. 3, Sobanska M.3, Zytkiewicz Z.R.3
1 V. Lashkaryov Institute of Semiconductor Physics, 41, prospect Nauky, 03680 Kyiv, Ukraine.
E-mail: plyt@isp.kiev.ua
2 National Technical University of Ukraine “Igor Sikorsky KPI”, 37, prospect Peremohy, 03056 Kyiv, Ukraine
3 Institute of Physics Polish Academy of Sciences, 32/46, Al. Lotnikow, 02-668 Warsaw, Poland

	
Fig.1. AFM image of PAMBE-grown axial wired nano structure (a); the corresponding surface potential map (b) and axial profiles of surface potential of wire at external bias variations.  	
Nanowire (NW) electronics provides one of ways to achieve the best performance of devices. The III-nitride NWs have excellent physical properties that could not be realized by IV 1D nanostructures or carbon nanotubes and have a great potential for next-generation electronics, photonics, sensors, including flexible devices.  
The versatile characterization of 1D III-N NWs provides a scanning probe microscopy and their field and current sensing techniques. The investigated 1D GaN-AlN-GaN axial nano- structures (fig.1) revealed an extremely high sensitivity to the variations of Kelvin probe (KPFM) tip static potential. We have shown that intrinsic topology and local electrical properties of NW’s could be effectively probed by contact-less KPFM technique. The nanoprobe estimation of piezo polarization and electron accumulation effects in III-N NW structures will be discussed.