Nanocomposites and nanomaterials
Ab-initio simulation of resistive memory based on GeTe-Sb2Te3 alloys
Balabai R.M., Zalevskyi D.V.
Kryvyi Rih State Pedagogical University, 54 Gagarina Ave., Kryvyi Rih, 50086, Ukraine. E-mail: balabai@i.ua , denys.zalevski@gmail.com

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. Moreover, phase-change memory based on GST is scalable, and is therefore a candidate to replace Flash memory for non-volatile data storage applications. The energy needed to switch between the two phases depends on the intrinsic properties of the phase-change material and the device architecture; this energy is usually supplied by laser or electrical pulses. [1] 
Phase-change memories based on reversible amorphous-crystal transformations in pseudobinary GeTe-Sb2Te3 alloys are one of the most promising nonvolatile memory technologies. The recently proposed superlattice-based memory, or interfacial phase-change memory (iPCM), is characterized by significantly faster switching, lower energy consumption, and better endurance. [2] 
In particular, aligning the c-axis of a hexagonal Sb2Te3 layer and the (111) direction of a cubic GeTe layer in a superlattice structure creates a material in which Ge atoms can switch between octahedral sites and lower-coordination sites at the interface of the superlattice layers. [3]
Here we demonstrate GeTe/Sb2Te3 interfacial phase-change memory (IPCM) data storage devices. This new Interfacial Phase-Change Memory (IPCM) has had many successes and continues to be the site of much active research.
In this paper the GeTe/Sb2Te3 interfacial phase-change memory (IPCM) are studied by methods of the electron density functional and first-principles pseudopotential based on own program code. [4] 

1.	Yuta Saito, Alexander V. Kolobov,  Paul Fons,  Kirill V. Mitrofanov,  Kotaro Makino,  Junji Tominaga and John Robertson. Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing // Appl. Phys. Lett.-2019.-114.-P.132102-1-5.
2.	Wuttig, M., Yamada, N. Phase-change materials for rewriteable data storage // Nature Mater.-2018.-6.-P. 824-832.
3.	Kolobov, A. V., Krbal, M., Fons, P., Tominaga, J., and Uruga, T. Distortion-triggered loss of long-range order in solids with bonding energy hierarchy. // Nature Chem.-2011.-3.-P. 311-316.
4.	Ab initio calculation [E-resource] – Mode access to the resource: http://sites.google.com/a/kdpu.edu.ua/calculationphysics.