Nanoscale physics

Modeling of electronic processes in sensory magnetic sensitive structures 
Glauberman M.A., Lepikh Ya.I. 
Odesa I.I. Mechnikov National University, 2 Dvoryanska str., 65082, Odesa, Ukraine, E-mail: ndl_lepikh@onu.edu.ua
 
As it is known the action of the Lorentz force on moving charge carriers lies in the base of the work of absolute majority semiconductor magnetosensitiv structures (MSS) including nanostructured, used, in particular, as magnetic field sensors. Depending on the carrier type that provides the magnetosensitiv effect, MSS are divided into unipolar and bipolar.
A natural alternative to unipolar structures are bipolar magnetosensitive structures (BMS). The use of non-basic carriers in them determines the multiplicity of such structures in terms of physical features - in terms of carriers generating methods and of useful signal obtaining, as well as the mechanisms of magnetic sensitivity. Therefore, the task of modeling electronic processes in such structures is quite actual.
The peculiarity of semiconductor magnetosensitive structures modeling is the fundamental impossibility of using linear one-dimensional models widely used in other fields of semiconductor physics and semiconductor devices, because the action of such structures is based on the current charge carriers direction changing.
A certain feature of the modeling is also due to the specifics of planar technology in the direction of the injected carrier current in the absence of a magnetic field and in the direction of the registered magnetic induction components relative to the technological structure surface. 
The law substantiates the legitimacy and a method of two-dimensional modeling of MSS injection has been proposed. Two-dimensional MSS structure models of vertical and horizontal modifications in accordance with the longitudinal and transverse magnetic axes has been considered. 
For vertical and horizontal structures with a longitudinal axis, the two-dimensional consideration is quite. 
It is shown that the flow drift component in such a model is adequately described by the continuity equation, which takes into account the action of the Lorentz force, when superimposing boundary conditions of the first kind at the boundaries of the collector transitions.
The diffusion component of the flow does not feel the effect of the magnetic field in the transistor structure volume.