Nanocomposites and nanomaterials

Wide bandgap semiconductor Structures. 

V.N. Stavrou

Hellenic Naval Academy, Hatzikyriakou Avenue, Pireaus 185 39, Greece 
E-mail: vstavrou@snd.edu.gr

The present theoretical study is related to interface polariton modes and their contribution to electron scattering processes within an asymmetric structure made with wide bandgap semiconductor materials. The numerical methods for calculating the electronic structure, the polariton modes and the electron transition rates are analyzed. Furthermore, the scattering mechanism for different carrier confinements and its dependence on the different types of phonons, the lattice temperature and the applied external fields are presented.

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 [2] Stavrou V.N., Bennett C.R., Al-Dossary O.M.M.  and Babiker M.  Electron scattering  and capture rates by emission of hybrid optical phonons.// Phys. Rev. B 63, 205304 (2001). 
[3] Stavrou V. N.  and Veropoulos G. P. Electron scattering and hybrid phonons in low-dimensional laser structures made with GaAs/AlxGa1− xAs.// Semicond. Sci. Technol. 24 (2009) 095014.
[4] Stavrou V. N.  and Veropoulos G. P. Surface scattering velocities in III-nitride quantum well laser structures via the emission of hybrid phonons.// Semicond. Sci. Technol. 26 (2011) 125017.
[5] Stavrou Spin qubits: spin relaxation in coupled quantum dots. // J. Phys.: Condens. Matter 30 (2018) 455301.