Department of physics
of radiation processes

Established in 1975. From 1975 to 1997 the department chief was Professor V.I. Shakhovtsov.

  • study the mechanisms of radiation effects on the physical characteristics of semiconductors and metals;
  • study of electronic states in nano-size objects;
  • development of radiation technology management properties of materials and electronic devices, implementation of engineering projects;
  • training specialist in the field of solid state physics.
  • 1975 – 1993 Launched and developed the study of structural and phase transitions in the fields of powerful gamma radiation 60Co. Particularly, establishment a decrease of temperature phase transitions order-disorder.
  • 1976 – 1984 Theory of kinetic phenomena in semiconductors contained large-scale heterogeneities is developed.
  • 1979 – 2000 Investigated processes of formation radiation defects in silicon with the electronic pulse irradiation in a wide range of temperatures. In particular, threshold formation energy and distribution function of Frenkel pairs on distances between components is found, as well as the top border of life time of vacancies and self interstitial atoms in silicon.
  • 1980 – 1990 Radiating technology for manufacture of semi-conductor discrete devices and microcircuits is developed and introduced.
  • 1982 – 2006 Influence of the rare-earth and isovalent impurities on silicon physical properties transformation at high-energy irradiation and heat treatments is investigated. A role of deformative interaction between defects is opened in mechanisms of nuclear radiation influence on optical and electrophysical characteristics of semiconductors.
  • 1984 Super-long migration of interstitial atoms formed at irradiation in silicon explained by its soliton condition at low temperature.
  • 1986 Theory of defects thermal-diffusion in semiconductors is constructed.
  • 1986 – 1995 Electronic conditions of defects having negative correlation energy are investigated in crystal and chalcogenide glass-like semiconductors.
  • 1992 Co-operative type magnetic ordering of dot defects generated in silicon crystal structure at radiation and high temperature is discovered.
  • 1992 – 2002 Existence of micro- and nano-dimensional heterogeneousness of the oxygen impurity distribution in silicon crystals is theoretically founded and experimentally proved.
  • 1998 – 2002 Physical principles of spatial heterogeneities (on the scale of 10-6 ? 10-3 cm) diagnostics in semi-conductor crystals is developed from analysis of collective influence of dot radiation and thermal defects on material physical parameters.
  • 2000 – 2008 Developed new directions for research on the kinetics of hot charge carriers in quantum structures based on GaN and GaAs.
  • 2006 – 2007 Influence phonons on annihilation and disintegration of Frenkel pairs formed by radiation in semiconductors is experimentally revealed.
  • 2008 Started the study of physical properties of carbon nanotubes in a wide temperature range

At department completed 5 thesises for a Doctor's degree and 23 for a Candidate’s degree. Work employee of department are awarded:

  • - USSR State Prize (V.I. Shakhovtsov,),
  • - URSR State Prize (V.I. Shakhovtsov, I.I. Yaskovets),
  • - I. Pulyuy’s prize NAS of Ukraine (B.O. Danilchenko).
  • I.D. Konozenko, M.P. Krulikovskaia, B.A. Danilchenko. Structural and phase changes in metals and alloys, crystallize in a stream of gamma-quantums // Advances in Physical Sciences, 161, 149 (1991).
  • L.I. Shpinar, I.I. Yaskovets. To the theory of conductivity, Hall effect in non-homogeneous semiconductors // Physics of the Solid State, 26, 1725 (1984).
  • L.I. Shpinar, I.I. Yaskovets. Features conductivity of semiconductors, caused by defects with strong electron-lattice interaction // Semiconductors, 22, №3 (1988).
  • R.S. Antonenko, Yu.V. Karpov, V.I. Shakhovtsov, V.L. Shindich, L.I. Shpinar, I.I. Yaskovets. Electrophysical properties of irradiated silicon with gadolinium impurity // Semiconductors, 12, 1707 (1978).
  • А.И.Войцеховский, A.M.Kraitchinskii, L.V. Mizrukhin, V.I. Shakhovtsov. Formation defects in n-Ge at irradiation by powerful electron impulses // Technical Phisics Letters, 7, 1029 (1981).
  • A.M.Kraitchinskii, L.V. Mizrukhin, V.I. Shakhovtsov. Distribution of Frenkel pairs on distances in irradiated silicon and germanium // Semiconductors, 17, 437 (1983).
  • A.M.Kraitchinskii, L.V. Mizrukhin, V.I. Shakhovtsov. Soliton state of internode atom// Reports Academy of Sciences of USSR. Series «А», №5(А), 63 (1984).
  • A.M.Kraitchinskii, L.V. Mizrukhin, V.I. Shakhovtsov. Atomic thermal-diffusion in semiconductors // Ukrainian Journal of Physics, 33, 411 (1986).
  • A.M.Kraitchinskii, L.V. Mizrukhin, N.I.Ostashko, V.I. Shakhovtsov. Lifetime of primary radiation defects in silicon // Technical Physics, 58, 1180 (1988).
  • A.M.Kraitchinskii, L.V. Mizrukhin, N.I.Ostashko, V.I. Shakhovtsov. Recombination and compensating defects in n-Si at irradiation single impulses of high intensity // Semiconductors, 22,.215 (1988).
  • A.M.Kraitchinskii, V.B. Neimash, T.R. Sagan, V.M. Syratskii, V.M. Tsmots', V.I. Shakhovtsov, V.L. Shindich. Formation radiation defects in silicon heat-treated at 1050 C // Ukrainian Journal of Physics, 34, 1071 (1977).
  • A.M.Kraitchinskii, N.I.Ostashko. About lifetime of primary radiation defects in silicon // Works of International conference on radiation materials technology. Kharkov, KHFTI AS USSR, 4, 149 (1990).
  • I.V.Zhalko-Titarenko, A.M.Kraitchinskii, N.I.Ostashko, I.S.Rogutskii. Efficiency of introduction radiation defects in silicon within the range of temperature 40-200 K // Technical Phisics Letters, 17, 74 (1991).
  • I.V.Zhalko-Titarenko, A.M.Kraitchinskii, N.I.Ostashko, I.S.Rogutskii. Formation radiation defects in silicon within range of temperature 10-300 K at electron irradiation // Semiconductors, 27, 1698 (1993).
  • A.M.Kraitchinskii, I.S.Rogutskii. Threshold energy of formation radiation defects in silicon // Ukrainian Journal of Physics, 42, 1271 (1997).
  • V.B.Neimash, V.M. Siratskii, A.M.Kraitchinskii, E.A.Puzenko. Electrical properties of a heat treated and irradiated silicon // Semiconductors, 32, 1049 (1998).
  • V.B.Neimash, E.A.Puzenko, O.M.Kabaldin, A.M.Kraitchinskii, M.M.Krasko. On the nature of thermal donor nucleation in silicon // Semiconductors, 33, 1423 (1999).
  • V.B.Neimash, O.O.Puzenko, O.M.Kabaldin, A.M.Kraitchinskii, M.M.Kras’ko, C.Claeys, E.Simoen. The nature of precursors for the thermal donor formation in silicon. Solid State Phenomena, 69-70, 351 (1999).
  • A.M. Kraichinskii, V.B.Neimash, I.S.Rogutskii, L.I.Shpinar. Primary radiation defects in silicon. Creation, annihilation, dissociation, getters. // Ukrainian Journal of Physics, 44, 259 (1999).
  • E. Simoen, C. Claeys, V.B. Neimash, A. Kraitchinskii, M. Kras’ko, O. Puzenko, A. Blondeel and P. Clauws. Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon // Applied Phys. Lett. , 76, 2838 (2000).
  • V.B. Neimash, A.M. Kraitchinskii, M.M. Krasko, O.O.Puzenko, O.M.Kabaldin. Influence of Tin Impurities of the Generation and Annealing of Low-Temperature Thermal Oxygen Donors in Czochralski Silicon // Ukrainian Journal of Physics, 45, 342 (2000).
  • C.Claeys, E.Simoen, V.Neimash, A.Kraitchinskii, M.Kras’ko, O.Puzenko, A.Blondeel, and P.Clauws. Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness // J.Electrochem.Soc., 148, G738 (2001).
  • V.B.Neimash, M.M.Krasko, A.M.Kraitchinskii. Generation of Radiation and Thermal Deffects in Silicon during 'Hot' Electron Irradiation // Ukrainian Journal of Physics, 47, 50 (2002).
  • E.Simoen, J.M.Rafi, C.Claeys, V.Neimash, A.Kraitchinskii, M. Kras’ko, V.Tishchenko, V.Voitovych, J.Versluys and P.Clauws. Deep Levels in High-Tempersture 1 MeV Electron-Irradiated n-Type Chochralski Silicon // Jpn.J.Appl.Phys., 42, 7184 (2003).
  • V.Neimash, M.Kras’ko, A.Kraitchinskii, V.Voytovych, V.Tishchenko, E.Simoen, J.M.Rafi, C.Claeys, J.Versluys, O. De Gryse, P.Clauws. DLTS studies of High-Temperature Electron Irradiated Cz n-Si // Phys.St.Sol.(a), 201, P.509 (2004).
  • V.Yu.Povarchuk, V.B.Neimash, A.M.Kraitchinskii, V.V.Maslov, V.K.Nosenko, G.M.Zelins’ka. Effect of Ionizing Radiation on Magnetic Properties and Structure of Fe(80)Si(6)B(14) Amorphous Alloy // Ukr.J.Phys. 49, 90 (2004).
  • A. Kraitchinskii, M. Kras'ko, V. Neimash, L. Shpinar, V. Tishchenko, V. Voitovich, A. O. Goushcha, and R. A. Metzler. Small angle light scattering and clusters of thermal donors in Si. // Journal of Applied Physics, 96, 7235 (2004).
  • V.B.Neimash, V.V.Voitovych, M.M.Kras'ko, A.M.Kraitchinskii, O.M.Kabaldin, Yu.V.Pavlovs'kyi, V.M. Tsmots'. Formation of Radiation-induced Defects in n-Si with Lead and Carbon Impurities // Ukrainian Journal of Physics, 50, 1273 (2005).
  • M.-L.David, E.Simoen, C.Claeys, V.Neimash, M.Kras’ko, A.Kraitchinskii, V.Voytovych, A.Kabaldin, J.F.Barbot. On the effect of lead on irradiation induced defects in silicon // Solid State Phenomena, 108-109, 373 (2005).
  • A.G.Kolosyuk, A.M.Kraitchinskii, M.M.Kras’ko, V.B.Neimash, I.S.Rogutskii. Temperature Dependence of the Efficiency of Vacancy Generation in n-Si at the 1 MeV Electron Irradiation // Ukrainian Journal of Physics, 52, 868 (2007).
  • B.A.Danilchenko, S.E.Zelensky, E.Drok, S.A.Vitusevich, S.V.Danylyuk, N.Klein, H.Luth, A.E.Belyaev, V.A.Kochelap. Hot-electron transport in AlGaN/GaN two-dimensional conducting channels // Appl. Phys. Letts., 85, 5421 (2004).
  • B.A.Danilchenko, S.E.Zelensky, E.Drok, A.E.Belyaev, V.A.Kochelap, H.Luth, S.A.Vitusevich. Enhancement by electric field of high-speed photoconductivity in AlGaN/GaN heterostructures // Appl. Phys. Letts., 90, 152102 (2007).
  • B.A.Danilchenko, T.Paszkiewisz, S.Wolski, A.Jezowski, T.Plackowski. Heat capacity and phonon mean free path of wurtzite GaN // Appl. Phys. Letts., 89, 061901 (2006).
  • A.Jezowski, B.A.Danilchenko, M.Bockowski, I.Grzegory, S.Krukowski, N.Suski, T.Paszkiewisz. Thermal conductivity of GaN crystals in 4,2-300 K range // Solid State Commun., 128, 69 (2003).
  • B.A.Danilchenko, I.A.Obukhov, T.Paszkiewisz, S.Wolski, A.Jezowski. On the upper limit of the thermal conductivity GaN crystals // Solid State Commun., 144, 114 (2007).
  • K. Labmann, C. Linsenmaier, F. Maier, F. Zeller, E. E. Haller, K. M. Itoh, L. I. Khirunenko, B. Pajot, H. Mussig Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium// Physica B: Condensed Matter, 263-264, 384 (1999).
  • L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, V. K. Shinkarenko. Oxygen in silicon doped with isovalent impurities // Physica B: Condensed Matter, 273-274, 317 (1999).
  • L. I. Khirunenko, V. A. Zasuha, Yu. V. Pomozov, M. G. Sosnin. Disturbance of oxygen by isovalent impurity atoms in silicon // Physica B: Condensed Matter, 308-310, 301 (2001).
  • E.Artacho, F.Yndurain, B.Pajot, R.Ramirez, C.P.Herrero, L.I.Khirunenko, K.M.Itoh, E.E.Haller. Interstitial oxygen in germanium and silicon // Phys.Rev.B, 56, 3820 (1997).
  • A.A. Bugai, V.M. Maksimenko, B.M. Turovskii, L. I. Khirunenko, V.I. Shakhovtsov, V. K. Shinkarenko, N.I. Gorbacheva. Study radiation defects in alloy Si:Ge by EPR method and IR spectroscopy // Semiconductors, 18, 2020 (1984).
  • L.I. Khirunenko, V.I. Shakhovtsov, V.K. Shinkarenko, L.I. Shpinar, I.I. Yaskovets. Features processes of formation radiation defects in crystals Si:Ge // Semiconductors, 21, 562 (1987).
  • L.I. Khirunenko, O.O. Kobzar, Yu.V. Pomozov, M.G. Sosnin, M.O. Tripachko Peculiarities of vacancy-related defects formation in Si doped with tin // Physica B: Condensed Matter, 340-342, 541 (2003).
  • L.I. Khirunenko, Yu.V. Pomozov, M.G. Sosnin, A. Duvanskii, V.J.B. Torres, J. Coutinho, R. Jones, P.R. Briddon, N.V. Abrosimov, H. Riemann. Interstitial carbon-related defects in Si1?xGex alloys // Physica B: Condensed Matter, 401-402, 200 (2007).
  • Aspirant A.P. Budnik and engineer V.F. Lyakh
    explore fotovidhuk irradiated GaAs solar cells.

  • Candidates f.m.n. O.O. Voytsihovska and M.M. Krasko,
    graduate V. Voitovich perform Hall effect measurements.

  • Graduate student A. Kobzar st.n.s. L.I. Hirunenko
    and researchers M.G. Sosnin, Y. Pomozov, M.O. Tripachko
    study the nature and structure of defects in isotopically enriched Si.

  • Founder department d.f.m.n. Sci. V.I. Shahovtsov.